Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 1999
ISSN: 0734-211X
DOI: 10.1116/1.590831